Presentation
Improving Block Management in 3D NAND Flash Memory Using Sub-block First Page Write Sequence
DescriptionContinual vertical scaling in 3D NAND flash memories results in larger memory blocks, causing performance degradation due to big-block management issues in storage systems. Pages within a block are traditionally written using layer first write sequence. This paper introduces and explores the benefits of an alternative sub-block first write sequence. This method when coupled with sub-block erase operations promises to reduce the big-block management issues. Our experimental evaluation on a 32-layer 3D flash memory shows that even though the proposed method increases the bit error rate, it remains below the threshold that can be corrected by error correction techniques.
Event Type
Work-in-Progress Poster
TimeTuesday, July 11th6:00pm - 7:00pm PDT
LocationLevel 2 Lobby
AI
Autonomous Systems
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Design
EDA
Embedded Systems
RISC-V
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