Presentation
Compact and High-Performance TCAM Based on Scaled Double-Gate FeFETs
SessionBeyond Moore is Cool
DescriptionTCAM is gaining popularity in machine learning and data-analytic applications. Ferroelectric FETs (FeFETs) are promising candidates for implementing TCAM owing to their high ON/OFF ratio, nonvolatility, and CMOS compatibility. However, conventional FeFETs (SG-FeFETs) suffer from high write voltage, low endurance, and scaling challenges. Recently, a double-gate FeFET (DG-FeFET) has been proposed and outperforms SG-FeFETs in many aspects. This paper investigates TCAM design challenges specific to DG-FeFETs and introduces a novel 1.5T1Fe TCAM design based on DG-FeFETs. An inhibition scheme is proposed to improve the write reliability of DG-FeFET TCAM. The 1.5T1Fe TCAM design can also be built with SG-FeFETs.
Event Type
Research Manuscript
TimeWednesday, July 12th4:40pm - 4:55pm PDT
Location3006, 3rd Floor
Design
Emerging Device Technologies